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al58 02lpl document number: ds38590 rev. 3 - 2 1 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL led driver, 30v, linear, adjustable, current sink description the al5802 lp l combines a high - gain npn transistor with a pre - biased npn transistor to make a simple , small footprint led driver. the led current is set by an external resistor connected from the r ext p in ( 4 ) to the gnd p in ( 6 ) , and t he internal high gain transistor develops approximately 0.6v across the external resistor. the al5802 lpls pwm dimming of the led current can be achieved by either driving the bias p in ( 1 ) with a low impedance voltage source, or driving the en p in ( 5 ) with an external open - collector npn transistor or open - drain n - c hannel mosfet. the al5802 lp l is available in a u - dfn3030 - 6 (type b) package and is ideal for driving 1 0ma to 1 2 0ma led currents. features ? r e x t = 0.65v ? ? ? C ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) pin assignments package: u - dfn 3030 - 6 (type b) ? ? mechanical data ? ? case material: molded plastic, green molding compound ? ? C ? ordering information (note 4 ) de vice qualification packaging tape and reel quantity part number suffix a l58 02 lpl commercial u - dfn3030 - 6 ( type b ) 3,000/tape & reel - 7 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . internal schematic (top view) (bottom view) 1 2 3 6 5 4 7 e4
al58 02lpl document number: ds38590 rev. 3 - 2 2 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL marking information date code key year 201 6 201 7 201 8 201 9 20 20 20 2 1 20 22 2023 2024 code d e f g h i j k l month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d typical application circuit pin descriptions pin number name function 1 bias biases the open collector output transistor 2 out open - collector led driver output 3 n/c no connection 4 r ext current sense pin led current sensing resistor should be connected from here to gnd 5 en enable pin for pwm dimming provides access to the base of q2 and the collector of q1 6 gnd ground reference point for setting led current 5802 = product type marking code ym = date code marking y = year (ex: d = 2016) m = month (ex: 9 = september)
al58 02lpl document number: ds38590 rev. 3 - 2 3 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL functional block diagram figure 1 block diagram absolute maximum ratings (note 5 ) symbol characteristics values unit v out output v oltage r elative to gnd 3 0 v v bias bias v oltage r elative to gnd 30 v v fb led v oltage r elative to gnd 6 v v en en v oltage r elative to gnd 6 v v re x t r ext v oltage r elative to gnd 6 v i out output c urrent 1 5 0 ma t op operating t emperature - 40 to + 150 c t st g storage t emperature - 55 to + 150 c note : 5 . these are stress ratings only. operation outside the absolute maximum ratings may cause device failure. operation at the abso lute maximum rating for extended periods of time may reduce device reliability. package thermal data characteristic symbol value unit power dissipation (note 6 ) (@ t a = + 25c ) p d 0. 88 w thermal resistance, junction to ambient air (note 6 ) (@ t a = + 25c ) r ja 1 45 c/w recommended operating conditions symbol parameter min max unit v bias supply v oltage r ange 4.5 30 v v out out v oltage r ange 0.8 30 i led led p in c urrent (note 7 ) 10 1 2 0 ma t a operating a mbient t emperature r ange - 40 + 125 c notes : 6 . device mounted on fr - 4 pcb , single - sided, 2oz copper trace weight with minimum recommended pad layout. 7 . subject to ambient temperature, power dissipation and pcb substrate material selection.
al58 02lpl document number: ds38590 rev. 3 - 2 4 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL electrical characteristics C npn transistor C q1 (@ t a = +25c, unless otherwise specified.) symbol characteristic test condition min typ max unit v (br)ceo collector - emitter breakdown voltage (note s 8 & 9 ) i c = 1.0ma, i b = 0 40 v v (br)ebo emitter - base breakdown voltage i e = 10a, i c = 0 6.0 v i cex collector cut o ff current (note 9 ) v ce = 30v, v eb(off) = 3.0v 50 na i bl base cut o ff current (note 9 ) v ce = 30v, v eb(off) = 3.0v 50 na h fe dc current gain i c = 1.0ma, v ce = 1.0v i c = 10ma, v ce = 1.0v 70 100 300 v ce(sat) collector - emitter saturation voltage (note 8 ) i c = 10ma, i b = 1.0ma 0.20 v v be(sat) base - emitter saturation voltage i c = 10ma, i b = 1.0ma 0.65 0.85 v v be(on) base - emitter turn - on voltage v ce = 1.50 v , i c = 2.0 ma 0.30 1.10 v electrical characteristics C npn pre - b iased transistor C q2 (@ t a = +25c, unless otherwise specified.) symbol characteristic test condition min typ max unit v (br)cbo collector - base breakdown voltage i c = 50 a, i e = 0 30 v v (br)ceo collector - emitter breakdown voltage (note 8 ) i c = 1ma, i b = 0 30 v v (br)ebo emitter - base breakdown voltage (note 9 ) i e = 50 a, i c = 0 5.0 v i cbo collector cuto ff current v cb = 30v, i e = 0 0.5 a i ebo emitter cuto ff current (note 9 ) v eb = 4v, i c = 0 0.5 a v ce(sat) collector - emitter saturation voltage (note 8 ) i c = 10ma, i b = 1ma 0.3 v v be(on) base - emitter turn - on voltage v ce = 5. 0 v , i c = 2.0 ma 0.30 1.10 v h fe dc current gain (note 8 ) v ce = 5v, i c = 150ma 100 r 1 input resistance 7 10 13 k? note s : 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design and tested only at the wafer level for single die. th e se parameters cannot be tested at the finished good s level due to the te stability of the device changed after packaging multi ple die s to form an application circuit.
al58 02lpl document number: ds38590 rev. 3 - 2 5 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL thermal characteristics v out (v) figure 3 output current vs. v out v out (v) figure 5 output current vs. v out v out (v) figure 6 output current vs. v out figure 4 output current vs. rext rext ( ) 0 50 100 1 10 100 i ( m a ) o u t vout = 1.4v vout = 5.4v vbias = 24v
al58 02lpl document number: ds38590 rev. 3 - 2 6 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL typical performance characteristics v out (v) figure 7 output current vs. v out v bias (v) figure 8 output current vs. v bias v bias (v) figure 9 output current vs. v bias v bias (v) figure 10 output current vs. v bias v bias (v) figure 11 output current vs. v bias
al58 02lpl document number: ds38590 rev. 3 - 2 7 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL application information the al5802lp l is designed for driving low current leds with a typical led current of 10ma to 100ma. it provides a cost - effective means for driving low current leds compared with more complex switching regulator solutions. furthermore, it reduces the pcb board area of the solution as there is no need for external co mponents like inductors, capacitors and switching diodes. figure 12 shows a typical application circuit diagram for driving an led or string of leds. the npn transistor q1 measures th e led current by sensing the voltage across an external resistor r ext . q1 uses its v be as a reference to set the voltage across r ext and controls the base current into q2. q2 operates in linear mode to regulate the led current. the led current is expressed as follows : i led = v be(q1) / r ext from this, for any required led cu rrent , the necessary external resistor r ext can be calculated as follows : r ext = v be(q1) / i led two or more al5802lp l devices can be connected in parallel to construct higher current led strings as shown in figure 13. consideration of the expected linear mode power dissipation must be factored into the d esign, with respect to the al5802l p l 's thermal resistance. the maximum voltage across the device can be calculated by taking the maximum supply voltage minus the voltage across the led string . v ce(q2) = v cc C v led C v be(q1) p d = v ce(q2) * i led + ( v cc C v be(q2) C v be(q1) ) 2 / r 1 as the output current of al5802lp l increases, it is necessary to provide appropriate thermal relief to the device. the power dissipation supported by the device is dependent upon the properties of the pcb board material, the copper pad area s and the ambient temperature. the maximum dissipa tion the device can handle is given as follows : p d = ( t j(max) - t a ) / r ja figure 1 2 typical application circuit for linear mode current sink led driver figure 1 3 application circuit for increasing led current
al58 02lpl document number: ds38590 rev. 3 - 2 8 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL sbr is a registered trademark of diodes incorporated application information ( cont inued ) pwm dimming can be achieved by driving the en p in. an external open - collector npn transistor or open - drain n - c hannel mosfet can be used to drive the en p in as shown in figure 14. dimming is achieved by turning the leds on and off for a portion of a single cycle. the pwm signal can be provided by a micro - controller or analog circuitry. figure 1 5 is a typical response of led current vs. pwm duty cycle on the en p in. - or - figure 14 application circuits for led driver with pwm dimming functionality fig ure 15 typical led current response vs. pwm duty cycle for r ext = 13? at 400hz pwm frequency to remove the potential of incorrect connection of the power supply damaging the lamps leds, many systems use some form of reverse polarity protection. one solution for reverse input polarity protection is to simply use a diode with a low v f in - line with the driver/led combination. the low v f of the series - connected diode increases the available voltage to the led stack and dissipates less power. a circuit example is presented in fig ure 1 6 using diodes inc. sbr ? (super barrier rectifier) technology. an sdm10u45lp (0.1a/45v) is shown, providing exceptionally low v f for its package size of 1mm x 0.6mm, equivalent to an 0402 chip style package. other reverse voltage ratings are also available o n diodes website such as the sbr02u100lp (0.2a/100v) or sbr0220lp (0.2a/20v). automotive applications c ommonly use this method for reverse battery protection. 0 10 20 40 60 80 100 l e d c u r r e n t ( m a ) pwm duty cycle (%) 20 0 30 40 50 60
al58 02lpl document number: ds38590 rev. 3 - 2 9 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL application information ( cont .) a second approach, shown in fig ure 1 7 , improves upon the method shown in fig ure 1 6 . whereas the method in fig ure 1 6 protects the light engine, it will not function until the problem is diagnosed and corrected. the method shown in fig ure 1 7 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to f unction. the bas40brw incorporates four low v f , schottky diodes into a single package and allows more voltage available for the led stack and dissipates less power tha n standard rectifier bridges. figure 16 application circuit for led driver with reverse polarity protection figure 17 application circuit for led driver with assured operation regardless of polarity r s al5802lp l v s bas40brw
al58 02lpl document number: ds38590 rev. 3 - 2 10 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. u - dfn3030 - 6 (type b) suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. u - dfn3030 - 6 (type b) u - dfn3030 - 6 (type b) dim min max typ a 0.57 0.63 0.60 a1 0 .00 0.05 0.02 b 0. 45 0. 55 0. 50 d 2.9 5 3. 05 3.00 d2 2. 30 2. 50 2. 40 e C C 0. 9 5 e 2.9 5 3. 05 3.00 e2 0.90 1. 10 1. 00 l 0. 55 0.6 5 0. 60 k C C 0. 3 5 z C C 0. 30 z1 C C 0. 0 5 all dimensions in mm dimensions value (in mm) c 0.950 g 0.200 x 0.600 x1 2.500 x2 2.600 y 0.800 y1 1.200 y2 3.200 seating plane d e d2 e2 e b l z z1 k a a1 c0.35 pin1#id x1 x2 y2 y1 c x y g
al58 02lpl document number: ds38590 rev. 3 - 2 11 of 11 www.diodes.com april 2016 ? diodes incorporated AL5802LPL important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or prod ucts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporat ed does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall in demnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized app lication. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. f urther, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com

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